High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures
In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48...
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| Format: | Article |
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American Institute of Physics (AIP)
2014
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| Online Access: | http://hdl.handle.net/1721.1/91922 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1826209604322721792 |
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| author | Yang, Li Cheng, Cheng-Wei Bulsara, Mayank Fitzgerald, Eugene A. |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Yang, Li Cheng, Cheng-Wei Bulsara, Mayank Fitzgerald, Eugene A. |
| author_sort | Yang, Li |
| collection | MIT |
| description | In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As (barrier)/In[subscript 0.53]Ga[subscript 0.47]As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situchemical vapor deposition(CVD)Al[subscript 2]O[subscript 3] displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al[subscript 2]O[subscript 3], which indicates that CVD process resulted in a lower Al[subscript 2]O[subscript 3]/In[subscript 0.53]Ga[subscript 0.47]As interfacial defect density. A gate bias was applied to the structure with CVDAl[subscript 2]O[subscript 3], and a peak mobility of 9243 cm[superscript 2]/V s at a carrier density of 2.7 × 10[superscript 12] cm[superscript −2] was demonstrated for the structure with a 4 nm In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In[subscript 0.53]Ga[subscript 0.47]As MOSFETstructures. |
| first_indexed | 2024-09-23T14:25:06Z |
| format | Article |
| id | mit-1721.1/91922 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:25:06Z |
| publishDate | 2014 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/919222022-09-29T09:21:00Z High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures Yang, Li Cheng, Cheng-Wei Bulsara, Mayank Fitzgerald, Eugene A. MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Physics Yang, Li Bulsara, Mayank Fitzgerald, Eugene A. In this paper, we demonstrate high electron mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor(MOSFET)structures. The Al[subscript 2]O[subscript 3] (gate dielectric)/In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As (barrier)/In[subscript 0.53]Ga[subscript 0.47]As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situchemical vapor deposition(CVD)Al[subscript 2]O[subscript 3] displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al[subscript 2]O[subscript 3], which indicates that CVD process resulted in a lower Al[subscript 2]O[subscript 3]/In[subscript 0.53]Ga[subscript 0.47]As interfacial defect density. A gate bias was applied to the structure with CVDAl[subscript 2]O[subscript 3], and a peak mobility of 9243 cm[superscript 2]/V s at a carrier density of 2.7 × 10[superscript 12] cm[superscript −2] was demonstrated for the structure with a 4 nm In[subscript 0.53]Ga[subscript 0.47]As-In[subscript 0.52]Al[subscript 0.48]As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In[subscript 0.53]Ga[subscript 0.47]As MOSFETstructures. Semiconductor Research Corporation. Center for Materials, Structures and Devices 2014-11-26T15:32:24Z 2014-11-26T15:32:24Z 2012-05 2012-01 Article http://purl.org/eprint/type/JournalArticle 00218979 1089-7550 http://hdl.handle.net/1721.1/91922 Yang, Li, Cheng-Wei Cheng, Mayank T. Bulsara, and Eugene A. Fitzgerald. “High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures.” Journal of Applied Physics 111, no. 10 (2012): 104511. © 2012 American Institute of Physics https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1063/1.4721328 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Yang, Li Cheng, Cheng-Wei Bulsara, Mayank Fitzgerald, Eugene A. High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures |
| title | High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures |
| title_full | High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures |
| title_fullStr | High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures |
| title_full_unstemmed | High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures |
| title_short | High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures |
| title_sort | high mobility in subscript 0 53 ga subscript 0 47 as quantum well metal oxide semiconductor field effect transistor structures |
| url | http://hdl.handle.net/1721.1/91922 https://orcid.org/0000-0002-1891-1959 |
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