Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates

The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on...

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Bibliographic Details
Main Authors: Jandl, Adam Christopher, Bulsara, Mayank, Fitzgerald, Eugene A.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics 2014
Online Access:http://hdl.handle.net/1721.1/91951
https://orcid.org/0000-0002-1891-1959