Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates
The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on...
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics
2014
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| Online Access: | http://hdl.handle.net/1721.1/91951 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1811093359668756480 |
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| author | Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. |
| author_sort | Jandl, Adam Christopher |
| collection | MIT |
| description | The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10[superscript 6]/cm[superscript 2]) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 10[superscript 5] cm[superscript −2] for films graded from the InP lattice constant to InAs [subscript 0.15]P[subscript 0.85]. A model for a two-energy level dislocation nucleation system is proposed based on our results. |
| first_indexed | 2024-09-23T15:44:00Z |
| format | Article |
| id | mit-1721.1/91951 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:44:00Z |
| publishDate | 2014 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | mit-1721.1/919512022-10-02T03:42:15Z Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Massachusetts Institute of Technology. Department of Materials Science and Engineering Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10[superscript 6]/cm[superscript 2]) and tilt of the epi-layer (>0.1°). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 × 10[superscript 5] cm[superscript −2] for films graded from the InP lattice constant to InAs [subscript 0.15]P[subscript 0.85]. A model for a two-energy level dislocation nucleation system is proposed based on our results. National Science Foundation (U.S.) (MIT MRSEC Program Award No. DMR-08-19762) United States. Dept. of Energy (Office of Science, Basic Energy Sciences under award No. DE-FG02-09ER46577) United States. Dept. of Energy (Solid State Solar Thermal Energy Conversion Center, an Energy Research Frontier Center, Award No. DE-FG02-09ER46577) 2014-12-01T15:31:24Z 2014-12-01T15:31:24Z 2014-04 2014-02 Article http://purl.org/eprint/type/JournalArticle 0021-8979 1089-7550 http://hdl.handle.net/1721.1/91951 Jandl, Adam, Mayank T. Bulsara, and Eugene A. Fitzgerald. “Materials Properties and Dislocation Dynamics in InAsP Compositionally Graded Buffers on InP Substrates.” Journal of Applied Physics 115, no. 15 (April 21, 2014): 153503. © 2014 AIP Publishing LLC. https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1063/1.4871289 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics MIT web domain |
| spellingShingle | Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates |
| title | Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates |
| title_full | Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates |
| title_fullStr | Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates |
| title_full_unstemmed | Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates |
| title_short | Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates |
| title_sort | materials properties and dislocation dynamics in inasp compositionally graded buffers on inp substrates |
| url | http://hdl.handle.net/1721.1/91951 https://orcid.org/0000-0002-1891-1959 |
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