Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates
The properties of InAs [subscript x]P1[subscript −x] compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (ε/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics
2014
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| Online Access: | http://hdl.handle.net/1721.1/91951 https://orcid.org/0000-0002-1891-1959 |