Disorder-induced double resonant Raman process in graphene

An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D′ features in the Raman spectra. This work yields analytical expressions for the D and D′ integrated Raman intensities that explicitly show the dependencies on laser energy, defec...

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Bibliographic Details
Main Authors: Rodriguez-Nieva, J. F., Barros, Eduardo B., Saito, R., Dresselhaus, Mildred
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: American Physical Society 2014
Online Access:http://hdl.handle.net/1721.1/92236
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0002-3023-396X