Disorder-induced double resonant Raman process in graphene
An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D′ features in the Raman spectra. This work yields analytical expressions for the D and D′ integrated Raman intensities that explicitly show the dependencies on laser energy, defec...
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| Format: | Article |
| Language: | English |
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American Physical Society
2014
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| Online Access: | http://hdl.handle.net/1721.1/92236 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-3023-396X |
| _version_ | 1811094786344484864 |
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| author | Rodriguez-Nieva, J. F. Barros, Eduardo B. Saito, R. Dresselhaus, Mildred |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Rodriguez-Nieva, J. F. Barros, Eduardo B. Saito, R. Dresselhaus, Mildred |
| author_sort | Rodriguez-Nieva, J. F. |
| collection | MIT |
| description | An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D′ features in the Raman spectra. This work yields analytical expressions for the D and D′ integrated Raman intensities that explicitly show the dependencies on laser energy, defect concentration, and electronic lifetime. Good agreement is obtained between the analytical results and experimental measurements on samples with increasing defect concentrations and at various laser excitation energies. The use of Raman spectroscopy to identify the nature of defects is discussed. Comparison between the models for the edge-induced and the disorder-induced D-band intensity suggests that edges or grain boundaries can be distinguished from disorder by the different dependence of their Raman intensity on laser excitation energy. Similarly, the type of disorder can potentially be identified not only by the intensity ratio [ [I subscript D] over [I subscript D′]], but also by its laser energy dependence. Also discussed is a quantitative analysis of quantum interference effects of the graphene wave functions, which determine the most important phonon wave vectors and scattering processes responsible for the D and D′ bands. |
| first_indexed | 2024-09-23T16:05:05Z |
| format | Article |
| id | mit-1721.1/92236 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T16:05:05Z |
| publishDate | 2014 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/922362022-09-29T18:05:58Z Disorder-induced double resonant Raman process in graphene Rodriguez-Nieva, J. F. Barros, Eduardo B. Saito, R. Dresselhaus, Mildred Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Dresselhaus, Mildred Rodriguez-Nieva, J. F. Barros, Eduardo B. An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D′ features in the Raman spectra. This work yields analytical expressions for the D and D′ integrated Raman intensities that explicitly show the dependencies on laser energy, defect concentration, and electronic lifetime. Good agreement is obtained between the analytical results and experimental measurements on samples with increasing defect concentrations and at various laser excitation energies. The use of Raman spectroscopy to identify the nature of defects is discussed. Comparison between the models for the edge-induced and the disorder-induced D-band intensity suggests that edges or grain boundaries can be distinguished from disorder by the different dependence of their Raman intensity on laser excitation energy. Similarly, the type of disorder can potentially be identified not only by the intensity ratio [ [I subscript D] over [I subscript D′]], but also by its laser energy dependence. Also discussed is a quantitative analysis of quantum interference effects of the graphene wave functions, which determine the most important phonon wave vectors and scattering processes responsible for the D and D′ bands. National Science Foundation (U.S.) (Grant DMR1004147) Conselho Nacional de Pesquisas (Brazil) (Grant 245640/2012-6) Fundação Cearense de Apoio ao Desenvolvimento Científico e Tecnológico 2014-12-08T20:56:07Z 2014-12-08T20:56:07Z 2014-12 2014-08 2014-12-03T23:00:03Z Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/92236 Rodriguez-Nieva, J. F. et al. “Disorder-Induced Double Resonant Raman Process in Graphene.” Physical Review B 90.23 (2014): 235410-1-9. © 2014 American Physical Society https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-3023-396X en http://dx.doi.org/10.1103/PhysRevB.90.235410 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Rodriguez-Nieva, J. F. Barros, Eduardo B. Saito, R. Dresselhaus, Mildred Disorder-induced double resonant Raman process in graphene |
| title | Disorder-induced double resonant Raman process in graphene |
| title_full | Disorder-induced double resonant Raman process in graphene |
| title_fullStr | Disorder-induced double resonant Raman process in graphene |
| title_full_unstemmed | Disorder-induced double resonant Raman process in graphene |
| title_short | Disorder-induced double resonant Raman process in graphene |
| title_sort | disorder induced double resonant raman process in graphene |
| url | http://hdl.handle.net/1721.1/92236 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-3023-396X |
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