Disorder-induced double resonant Raman process in graphene
An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D′ features in the Raman spectra. This work yields analytical expressions for the D and D′ integrated Raman intensities that explicitly show the dependencies on laser energy, defec...
Main Authors: | Rodriguez-Nieva, J. F., Barros, Eduardo B., Saito, R., Dresselhaus, Mildred |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | English |
Published: |
American Physical Society
2014
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Online Access: | http://hdl.handle.net/1721.1/92236 https://orcid.org/0000-0001-8492-2261 https://orcid.org/0000-0002-3023-396X |
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