Statistical Modeling with the Virtual Source MOSFET Model

Statistical Modeling with the Virtual Source MOSFET Model

A statistical extension of the ultra-compact Virtual Source (VS) MOSFET model is developed here for the first time. The characterization uses a statistical extraction technique based on the backward propagation of variance (BPV) with variability parameters derived directly from the nominal VS model....

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Bibliographic Details
Main Authors: Yu, Li, Wei, Lan, Elfadel, Ibrahim M., Antoniadis, Dimitri A., Boning, Duane S.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2014
Online Access:http://hdl.handle.net/1721.1/92428
https://orcid.org/0000-0002-4836-6525
https://orcid.org/0000-0002-0417-445X

Internet

http://hdl.handle.net/1721.1/92428
https://orcid.org/0000-0002-4836-6525
https://orcid.org/0000-0002-0417-445X

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