Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread funct...

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Bibliographic Details
Main Authors: Zhang, Lihua, Su, Dong, Duan, Huigao, Stach, Eric A., Berggren, Karl K., Manfrinato, Vitor Riseti, Hobbs, Richard
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Chemical Society (ACS) 2015
Online Access:http://hdl.handle.net/1721.1/92829
https://orcid.org/0000-0003-0855-3710
https://orcid.org/0000-0002-9129-4731
https://orcid.org/0000-0001-7453-9031

Internet

http://hdl.handle.net/1721.1/92829
https://orcid.org/0000-0003-0855-3710
https://orcid.org/0000-0002-9129-4731
https://orcid.org/0000-0001-7453-9031

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