Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies

Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies

Integrated circuits based on InGaAs Field Effect Transistors are currently in wide use in the RF front-ends of smart phones and other mobile platforms, wireless LANs, high data rate fiber-optic links and many defense and space communication systems. InGaAs ICs are also under intense research for new...

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Bibliographic Details
Main Author: del Alamo, Jesus A.
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2015
Online Access:http://hdl.handle.net/1721.1/93881

Internet

http://hdl.handle.net/1721.1/93881

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