All-Metallic Vertical Transistors Based on Stacked Dirac Materials

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed...

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Bibliographic Details
Main Authors: Wang, Yangyang, Ni, Zeyuan, Liu, Qihang, Quhe, Ruge, Zheng, Jiaxin, Ye, Meng, Yu, Dapeng, Shi, Junjie, Yang, Jinbo, Li, Ju, Lu, Jing
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: Wiley Blackwell 2015
Online Access:http://hdl.handle.net/1721.1/95880
https://orcid.org/0000-0002-7841-8058

Internet

http://hdl.handle.net/1721.1/95880
https://orcid.org/0000-0002-7841-8058

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