All-Metallic Vertical Transistors Based on Stacked Dirac Materials
It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed...
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| Format: | Article |
| Language: | en_US |
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Wiley Blackwell
2015
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| Online Access: | http://hdl.handle.net/1721.1/95880 https://orcid.org/0000-0002-7841-8058 |
| _version_ | 1826204291316056064 |
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| author | Wang, Yangyang Ni, Zeyuan Liu, Qihang Quhe, Ruge Zheng, Jiaxin Ye, Meng Yu, Dapeng Shi, Junjie Yang, Jinbo Li, Ju Lu, Jing |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Wang, Yangyang Ni, Zeyuan Liu, Qihang Quhe, Ruge Zheng, Jiaxin Ye, Meng Yu, Dapeng Shi, Junjie Yang, Jinbo Li, Ju Lu, Jing |
| author_sort | Wang, Yangyang |
| collection | MIT |
| description | It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 10[superscript 4]. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps. |
| first_indexed | 2024-09-23T12:51:58Z |
| format | Article |
| id | mit-1721.1/95880 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:51:58Z |
| publishDate | 2015 |
| publisher | Wiley Blackwell |
| record_format | dspace |
| spelling | mit-1721.1/958802022-10-01T11:35:48Z All-Metallic Vertical Transistors Based on Stacked Dirac Materials Wang, Yangyang Ni, Zeyuan Liu, Qihang Quhe, Ruge Zheng, Jiaxin Ye, Meng Yu, Dapeng Shi, Junjie Yang, Jinbo Li, Ju Lu, Jing Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Li, Ju It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 10[superscript 4]. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps. National Natural Science Foundation (China) (11274016) National Natural Science Foundation (China) (51072007) National Natural Science Foundation (China) (91021017) National Natural Science Foundation (China) (11047018) National Natural Science Foundation (China) (60890193) National Basic Research Program of China (2013CB932604) National Basic Research Program of China (2012CB619304) China. Fundamental Research Funds for the Central Universities National Fund for Fostering Talents of Basic Science (J1030310) National Fund for Fostering Talents of Basic Science (J1103205) 2015-03-05T17:20:47Z 2015-03-05T17:20:47Z 2014-11 2014-10 Article http://purl.org/eprint/type/JournalArticle 1616301X 1616-3028 http://hdl.handle.net/1721.1/95880 Wang, Yangyang, Zeyuan Ni, Qihang Liu, Ruge Quhe, Jiaxin Zheng, Meng Ye, Dapeng Yu, et al. “All-Metallic Vertical Transistors Based on Stacked Dirac Materials.” Adv. Funct. Mater. 25, no. 1 (November 3, 2014): 68–77. https://orcid.org/0000-0002-7841-8058 en_US http://dx.doi.org/10.1002/adfm.201402904 Advanced Functional Materials Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Wiley Blackwell arXiv |
| spellingShingle | Wang, Yangyang Ni, Zeyuan Liu, Qihang Quhe, Ruge Zheng, Jiaxin Ye, Meng Yu, Dapeng Shi, Junjie Yang, Jinbo Li, Ju Lu, Jing All-Metallic Vertical Transistors Based on Stacked Dirac Materials |
| title | All-Metallic Vertical Transistors Based on Stacked Dirac Materials |
| title_full | All-Metallic Vertical Transistors Based on Stacked Dirac Materials |
| title_fullStr | All-Metallic Vertical Transistors Based on Stacked Dirac Materials |
| title_full_unstemmed | All-Metallic Vertical Transistors Based on Stacked Dirac Materials |
| title_short | All-Metallic Vertical Transistors Based on Stacked Dirac Materials |
| title_sort | all metallic vertical transistors based on stacked dirac materials |
| url | http://hdl.handle.net/1721.1/95880 https://orcid.org/0000-0002-7841-8058 |
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