All-Metallic Vertical Transistors Based on Stacked Dirac Materials
It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Wiley Blackwell
2015
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| Online Access: | http://hdl.handle.net/1721.1/95880 https://orcid.org/0000-0002-7841-8058 |