Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics
We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 10[superscript 9] cm[superscript −3]) suggest that minority-c...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2015
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| Online Access: | http://hdl.handle.net/1721.1/97226 https://orcid.org/0000-0002-4609-9312 https://orcid.org/0000-0001-8345-4937 |