Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon

We present a methodology for estimating the efficiency potential for candidate impurity-band photovoltaic materials from empirical measurements. This methodology employs both Fourier transform infrared spectroscopy and low-temperature photoconductivity to calculate a “performance figure of merit” an...

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Bibliographic Details
Main Authors: Krich, Jacob J., Akey, Austin J., Recht, D., Aziz, Michael J., Sullivan, Joseph T., Simmons, Christie, Buonassisi, Tonio
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2015
Online Access:http://hdl.handle.net/1721.1/97227
https://orcid.org/0000-0001-8345-4937

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http://hdl.handle.net/1721.1/97227
https://orcid.org/0000-0001-8345-4937

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