Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon's band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal trea...

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Bibliographic Details
Main Authors: Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Akey, Austin J, Sullivan, Joseph Timothy, Buonassisi, Anthony, Simmons, Christie B.
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2015
Online Access:http://hdl.handle.net/1721.1/97232
https://orcid.org/0000-0001-8345-4937

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http://hdl.handle.net/1721.1/97232
https://orcid.org/0000-0001-8345-4937

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