Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon

Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previ...

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Bibliographic Details
Main Authors: Sher, Meng-Ju, Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Lindenberg, Aaron M., Akey, Austin J, Winkler, Mark Thomas, Buonassisi, Anthony, Simmons, Christie B.
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2015
Online Access:http://hdl.handle.net/1721.1/97242
https://orcid.org/0000-0001-8345-4937

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http://hdl.handle.net/1721.1/97242
https://orcid.org/0000-0001-8345-4937

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