Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon
Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previ...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2015
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| Online Access: | http://hdl.handle.net/1721.1/97242 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1811088931764043776 |
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| author | Sher, Meng-Ju Krich, Jacob J. Recht, Daniel Aziz, Michael J. Lindenberg, Aaron M. Akey, Austin J Winkler, Mark Thomas Buonassisi, Anthony Simmons, Christie B. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Sher, Meng-Ju Krich, Jacob J. Recht, Daniel Aziz, Michael J. Lindenberg, Aaron M. Akey, Austin J Winkler, Mark Thomas Buonassisi, Anthony Simmons, Christie B. |
| author_sort | Sher, Meng-Ju |
| collection | MIT |
| description | Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previously conducted. Here, we use optical-pump/terahertz-probe measurements to study carrier recombination dynamics of chalcogen-hyperdoped silicon with sub-picosecond resolution. The recombination dynamics is described by two exponential decay time scales: a fast decay time scale ranges between 1 and 200 ps followed by a slow decay on the order of 1 ns. In contrast to the prior theoretical predictions, we find that the carrier lifetime decreases with increasing dopant concentration up to and above the insulator-to-metal transition. Evaluating the material's figure of merit reveals an optimum doping concentration for maximizing performance. |
| first_indexed | 2024-09-23T14:10:19Z |
| format | Article |
| id | mit-1721.1/97242 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:10:19Z |
| publishDate | 2015 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/972422022-09-28T19:00:39Z Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon Sher, Meng-Ju Krich, Jacob J. Recht, Daniel Aziz, Michael J. Lindenberg, Aaron M. Akey, Austin J Winkler, Mark Thomas Buonassisi, Anthony Simmons, Christie B. Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity Massachusetts Institute of Technology. Photovoltaic Research Laboratory Simmons, Christie Akey, Austin J. Winkler, Mark T. Buonassisi, Tonio Intermediate-band materials have the potential to be highly efficient solar cells and can be fabricated by incorporating ultrahigh concentrations of deep-level dopants. Direct measurements of the ultrafast carrier recombination processes under supersaturated dopant concentrations have not been previously conducted. Here, we use optical-pump/terahertz-probe measurements to study carrier recombination dynamics of chalcogen-hyperdoped silicon with sub-picosecond resolution. The recombination dynamics is described by two exponential decay time scales: a fast decay time scale ranges between 1 and 200 ps followed by a slow decay on the order of 1 ns. In contrast to the prior theoretical predictions, we find that the carrier lifetime decreases with increasing dopant concentration up to and above the insulator-to-metal transition. Evaluating the material's figure of merit reveals an optimum doping concentration for maximizing performance. Center for Clean Water and Clean Energy at MIT and KFUPM National Science Foundation (U.S.) (Grant Contract ECCS-1102050) National Science Foundation (U.S.) (United States. Dept. of Energy Contract EEC-1041895) 2015-06-09T15:42:54Z 2015-06-09T15:42:54Z 2014-08 2014-06 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/97242 Sher, Meng-Ju, Christie B. Simmons, Jacob J. Krich, Austin J. Akey, Mark T. Winkler, Daniel Recht, Tonio Buonassisi, Michael J. Aziz, and Aaron M. Lindenberg. “Picosecond Carrier Recombination Dynamics in Chalcogen-Hyperdoped Silicon.” Appl. Phys. Lett. 105, no. 5 (August 4, 2014): 053905. © 2014 AIP Publishing LLC https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.4892357 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) Other univ. web domain |
| spellingShingle | Sher, Meng-Ju Krich, Jacob J. Recht, Daniel Aziz, Michael J. Lindenberg, Aaron M. Akey, Austin J Winkler, Mark Thomas Buonassisi, Anthony Simmons, Christie B. Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon |
| title | Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon |
| title_full | Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon |
| title_fullStr | Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon |
| title_full_unstemmed | Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon |
| title_short | Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon |
| title_sort | picosecond carrier recombination dynamics in chalcogen hyperdoped silicon |
| url | http://hdl.handle.net/1721.1/97242 https://orcid.org/0000-0001-8345-4937 |
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