Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations

The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance...

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Bibliographic Details
Main Authors: Yang, Nuo, Luo, Tengfei, Esfarjani, Keivan, Henry, Asegun, Tian, Zhiting, Shiomi, Junichiro, Chalopin, Yann, Li, Baowen, Chen, Gang
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: American Scientific Publishers 2015
Online Access:http://hdl.handle.net/1721.1/97396
https://orcid.org/0000-0002-3968-8530

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http://hdl.handle.net/1721.1/97396
https://orcid.org/0000-0002-3968-8530

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