Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations
The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Scientific Publishers
2015
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| Online Access: | http://hdl.handle.net/1721.1/97396 https://orcid.org/0000-0002-3968-8530 |
| _version_ | 1826204091646214144 |
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| author | Yang, Nuo Luo, Tengfei Esfarjani, Keivan Henry, Asegun Tian, Zhiting Shiomi, Junichiro Chalopin, Yann Li, Baowen Chen, Gang |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Yang, Nuo Luo, Tengfei Esfarjani, Keivan Henry, Asegun Tian, Zhiting Shiomi, Junichiro Chalopin, Yann Li, Baowen Chen, Gang |
| author_sort | Yang, Nuo |
| collection | MIT |
| description | The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We find that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces. |
| first_indexed | 2024-09-23T12:48:46Z |
| format | Article |
| id | mit-1721.1/97396 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:48:46Z |
| publishDate | 2015 |
| publisher | American Scientific Publishers |
| record_format | dspace |
| spelling | mit-1721.1/973962022-10-01T11:13:54Z Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations Yang, Nuo Luo, Tengfei Esfarjani, Keivan Henry, Asegun Tian, Zhiting Shiomi, Junichiro Chalopin, Yann Li, Baowen Chen, Gang Massachusetts Institute of Technology. Department of Mechanical Engineering Yang, Nuo Tian, Zhiting Chen, Gang The thermal interface conductance between Al and Si was simulated by a non-equilibrium molecular dynamics method. In the simulations, the coupling between electrons and phonons in Al are considered by using a stochastic force. The results show the size dependence of the interface thermal conductance and the effect of electron–phonon coupling on the interface thermal conductance. To understand the mechanism of interface resistance, the vibration power spectra are calculated. We find that the atomic level disorder near the interface is an important aspect of interfacial phonon transport, which leads to a modification of the phonon states near the interface. There, the vibrational spectrum near the interface greatly differs from the bulk. This change in the vibrational spectrum affects the results predicted by AMM and DMM theories and indicates new physics is involved with phonon transport across interfaces. United States. Dept. of Energy. Office of Science (Solid-State Solar-Thermal Energy Conversion Center Award DE-SC0001299/DE-FG02-09ER46577) National Natural Science Foundation (China) (11334007) National Natural Science Foundation (China) (11204216) 2015-06-12T15:47:21Z 2015-06-12T15:47:21Z 2015-02 Article http://purl.org/eprint/type/JournalArticle 15461955 15461963 http://hdl.handle.net/1721.1/97396 Yang, Nuo, Tengfei Luo, Keivan Esfarjani, Asegun Henry, Zhiting Tian, Junichiro Shiomi, Yann Chalopin, Baowen Li, and Gang Chen. “Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations.” Journal of Computational and Theoretical Nanoscience 12, no. 2 (February 1, 2015): 168–74. https://orcid.org/0000-0002-3968-8530 en_US http://dx.doi.org/10.1166/jctn.2015.3710 Journal of Computational and Theoretical Nanoscience Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf American Scientific Publishers arXiv |
| spellingShingle | Yang, Nuo Luo, Tengfei Esfarjani, Keivan Henry, Asegun Tian, Zhiting Shiomi, Junichiro Chalopin, Yann Li, Baowen Chen, Gang Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations |
| title | Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations |
| title_full | Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations |
| title_fullStr | Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations |
| title_full_unstemmed | Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations |
| title_short | Thermal Interface Conductance Between Aluminum and Silicon by Molecular Dynamics Simulations |
| title_sort | thermal interface conductance between aluminum and silicon by molecular dynamics simulations |
| url | http://hdl.handle.net/1721.1/97396 https://orcid.org/0000-0002-3968-8530 |
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