Processing technology for high quality AlGaN/GaN MOSHEMT interfaces

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.

Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Saadat, Omair I
Rannpháirtithe: Tomis Palacios.
Formáid: Tráchtas
Teanga:eng
Foilsithe / Cruthaithe: Massachusetts Institute of Technology 2015
Ábhair:
Rochtain ar líne:http://hdl.handle.net/1721.1/97810