Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
The electron-hole (EH) bilayer tunneling field-effect transistor promises to eliminate heavy-doping band tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency ve...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2015
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| Online Access: | http://hdl.handle.net/1721.1/99724 https://orcid.org/0000-0002-7778-8073 https://orcid.org/0000-0002-4836-6525 |