Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript...

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Main Authors: Zhang, Qian, Chere, Eyob Kebede, McEnaney, Kenneth, Yao, Mengliang, Cao, Feng, Ni, Yizhou, Chen, Shuo, Opeil, Cyril, Chen, Gang, Ren, Zhifeng
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: Wiley Blackwell 2015
Online Access:http://hdl.handle.net/1721.1/99761
https://orcid.org/0000-0002-3968-8530

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http://hdl.handle.net/1721.1/99761
https://orcid.org/0000-0002-3968-8530

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