Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration
Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript...
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| Format: | Article |
| Language: | en_US |
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Wiley Blackwell
2015
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| Online Access: | http://hdl.handle.net/1721.1/99761 https://orcid.org/0000-0002-3968-8530 |
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| author | Zhang, Qian Chere, Eyob Kebede McEnaney, Kenneth Yao, Mengliang Cao, Feng Ni, Yizhou Chen, Shuo Opeil, Cyril Chen, Gang Ren, Zhifeng |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Zhang, Qian Chere, Eyob Kebede McEnaney, Kenneth Yao, Mengliang Cao, Feng Ni, Yizhou Chen, Shuo Opeil, Cyril Chen, Gang Ren, Zhifeng |
| author_sort | Zhang, Qian |
| collection | MIT |
| description | Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript −1] at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10[superscript 18]–10[superscript 19] cm[superscript −3]. Even though the highest room temperature power factor ≈3.3 × 10[superscript −3] W m[superscript −1] K[superscript −2] is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb[subscript 0.9925]Cr[subscript 0.0075]Se and ≈673 K for Pb[subscript 0.995]Cr[subscript 0.005]Se. The calculated device efficiency of Pb[subscript 0.995]Cr[subscript 0.005]Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature. |
| first_indexed | 2024-09-23T15:02:57Z |
| format | Article |
| id | mit-1721.1/99761 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:02:57Z |
| publishDate | 2015 |
| publisher | Wiley Blackwell |
| record_format | dspace |
| spelling | mit-1721.1/997612022-09-29T12:17:45Z Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration Zhang, Qian Chere, Eyob Kebede McEnaney, Kenneth Yao, Mengliang Cao, Feng Ni, Yizhou Chen, Shuo Opeil, Cyril Chen, Gang Ren, Zhifeng Massachusetts Institute of Technology. Department of Mechanical Engineering Chen, Gang McEnaney, Kenneth Chen, Gang Ti, V, Cr, Nb, and Mo are found to be effective at increasing the Seebeck coefficient and power factor of n-type PbSe at temperatures below 600 K. It is found that the higher Seebeck coefficients and power factors are due to higher Hall mobility ≈1000 cm[superscript 2] V[superscript −]1s[superscript −1] at lower carrier concentration. A larger average ZT value (relevant for applications) can be obtained by an optimization of carrier concentration to ≈10[superscript 18]–10[superscript 19] cm[superscript −3]. Even though the highest room temperature power factor ≈3.3 × 10[superscript −3] W m[superscript −1] K[superscript −2] is found in 1 at% Mo-doped PbSe, the highest ZT is achieved in Cr-doped PbSe. Combined with the lower thermal conductivity, ZT is improved to ≈0.4 at room temperature and peak ZTs of ≈1.0 are observed at ≈573 K for Pb[subscript 0.9925]Cr[subscript 0.0075]Se and ≈673 K for Pb[subscript 0.995]Cr[subscript 0.005]Se. The calculated device efficiency of Pb[subscript 0.995]Cr[subscript 0.005]Se is as high as ≈12.5% with cold side 300 K and hot side 873 K, higher than those of all the n-type PbSe materials reported in the literature. United States. Dept. of Energy. Office of Science (Solid-State Solar-Thermal Energy Conversion Center Award DE-SC0001299) 2015-11-09T16:28:03Z 2015-11-09T16:28:03Z 2015-01 2014-11 Article http://purl.org/eprint/type/JournalArticle 16146832 1614-6840 http://hdl.handle.net/1721.1/99761 Zhang, Qian, Eyob Kebede Chere, Kenneth McEnaney, Mengliang Yao, Feng Cao, Yizhou Ni, Shuo Chen, Cyril Opeil, Gang Chen, and Zhifeng Ren. “Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration.” Adv. Energy Mater. 5, no. 8 (January 7, 2015): n/a–n/a. https://orcid.org/0000-0002-3968-8530 en_US http://dx.doi.org/10.1002/aenm.201401977 Advanced Energy Materials Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Wiley Blackwell Chen |
| spellingShingle | Zhang, Qian Chere, Eyob Kebede McEnaney, Kenneth Yao, Mengliang Cao, Feng Ni, Yizhou Chen, Shuo Opeil, Cyril Chen, Gang Ren, Zhifeng Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration |
| title | Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration |
| title_full | Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration |
| title_fullStr | Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration |
| title_full_unstemmed | Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration |
| title_short | Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration |
| title_sort | enhancement of thermoelectric performance of n type pbse by cr doping with optimized carrier concentration |
| url | http://hdl.handle.net/1721.1/99761 https://orcid.org/0000-0002-3968-8530 |
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