Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation. Following electrical stress, we conducted a well-established three-step wet etching process to remove passivation, gate and...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2015
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| Online Access: | http://hdl.handle.net/1721.1/99976 https://orcid.org/0000-0001-7274-7160 |