Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress

We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation. Following electrical stress, we conducted a well-established three-step wet etching process to remove passivation, gate and...

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Bibliographic Details
Main Authors:	Chen, C.-Y., Wu, Yufei, del Alamo, Jesus A.
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Language:	en_US
Published:	American Institute of Physics (AIP) 2015
Online Access:	http://hdl.handle.net/1721.1/99976 https://orcid.org/0000-0001-7274-7160

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