Intrinsic nanofilamentation in resistive switching

Intrinsic nanofilamentation in resistive switching

Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here,...

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Bibliographic Details
Main Authors: Migas, Dmitri B., Borisenko, Victor E., Wu, Xing, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xi Xiang, Li, Kun, Pey, Kin Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Science::Physics::Electricity and magnetism
Online Access:https://hdl.handle.net/10356/100029
http://hdl.handle.net/10220/18627

Internet

https://hdl.handle.net/10356/100029
http://hdl.handle.net/10220/18627

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