Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage charact...

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Bibliographic Details
Main Authors: Hewak, Dan W., Fedorenko, Yanina G., Lee, Tae-Hoon, Hughes, Mark A., Colaux, Julien L., Jeynes, C., Gwilliam, Russell M., Homewood, Kevin P., Yao, Jin, Elliott, Stephen R., Gholipour, B., Curry, Richard J.
Other Authors: Digonnet, Michel J. F.
Format: Conference Paper
Language:English
Published: 2014
Subjects:
DRNTU::Science
Online Access:https://hdl.handle.net/10356/100033
http://hdl.handle.net/10220/19677

Internet

https://hdl.handle.net/10356/100033
http://hdl.handle.net/10220/19677

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