Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si) (001) substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD) system is studied. The growth sequence consists of several steps at low temperature (LT) at 400 °C,...

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Bibliographic Details
Main Authors: Fitzgerald, Eugene A., Lee, Kwang Hong, Jandl, Adam, Tan, Yew Heng, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
Electrical and Electronic Engineering
Online Access:https://hdl.handle.net/10356/100172
http://hdl.handle.net/10220/18453

Internet

https://hdl.handle.net/10356/100172
http://hdl.handle.net/10220/18453

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