Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber

The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si) (001) substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD) system is studied. The growth sequence consists of several steps at low temperature (LT) at 400 °C,...

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Detaylı Bibliyografya
Asıl Yazarlar: Fitzgerald, Eugene A., Lee, Kwang Hong, Jandl, Adam, Tan, Yew Heng, Tan, Chuan Seng
Diğer Yazarlar: School of Electrical and Electronic Engineering
Materyal Türü: Journal Article
Dil:English
Baskı/Yayın Bilgisi: 2014
Konular:
Electrical and Electronic Engineering
Online Erişim:https://hdl.handle.net/10356/100172
http://hdl.handle.net/10220/18453

Internet

https://hdl.handle.net/10356/100172
http://hdl.handle.net/10220/18453

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