Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dotsgrown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescencelinewidth (from 78.9 to 20.5 meV) from the InAs dot layer o...
| Asıl Yazarlar: | , , , , , , |
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| Diğer Yazarlar: | |
| Materyal Türü: | Journal Article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
2013
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| Konular: | |
| Online Erişim: | https://hdl.handle.net/10356/100261 http://hdl.handle.net/10220/17876 |