Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition
Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and ex...
| Үндсэн зохиолчид: | , , , , , , |
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| Бусад зохиолчид: | |
| Формат: | Journal Article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2015
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| Нөхцлүүд: | |
| Онлайн хандалт: | https://hdl.handle.net/10356/100276 http://hdl.handle.net/10220/25679 |