Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition
Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and ex...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2015
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| Online Access: | https://hdl.handle.net/10356/100276 http://hdl.handle.net/10220/25679 |
| _version_ | 1826124583483211776 |
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| author | Utama, Muhammad Iqbal Bakti Lu, Xin Zhan, Da Ha, Son Tung Yuan, Yanwen Shen, Zexiang Xiong, Qihua |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Utama, Muhammad Iqbal Bakti Lu, Xin Zhan, Da Ha, Son Tung Yuan, Yanwen Shen, Zexiang Xiong, Qihua |
| author_sort | Utama, Muhammad Iqbal Bakti |
| collection | NTU |
| description | Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures. |
| first_indexed | 2024-10-01T06:23:05Z |
| format | Journal Article |
| id | ntu-10356/100276 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:23:05Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1002762023-02-28T19:41:04Z Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition Utama, Muhammad Iqbal Bakti Lu, Xin Zhan, Da Ha, Son Tung Yuan, Yanwen Shen, Zexiang Xiong, Qihua School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Science::Physics Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2015-05-26T07:47:41Z 2019-12-06T20:19:29Z 2015-05-26T07:47:41Z 2019-12-06T20:19:29Z 2014 2014 Journal Article Utama, M. I. B., Lu, X., Zhan, D., Ha, S. T., Yuan, Y., Shen, Z., et al. (2014). Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition. Nanoscale, 6(21), 12376-12382. https://hdl.handle.net/10356/100276 http://hdl.handle.net/10220/25679 10.1039/C4NR03817G en Nanoscale © 2014 The Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Nanoscale, The Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1039/C4NR03817G]. application/pdf |
| spellingShingle | DRNTU::Science::Physics Utama, Muhammad Iqbal Bakti Lu, Xin Zhan, Da Ha, Son Tung Yuan, Yanwen Shen, Zexiang Xiong, Qihua Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition |
| title | Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition |
| title_full | Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition |
| title_fullStr | Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition |
| title_full_unstemmed | Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition |
| title_short | Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition |
| title_sort | etching free patterning method for electrical characterization of atomically thin mose2 films grown by chemical vapor deposition |
| topic | DRNTU::Science::Physics |
| url | https://hdl.handle.net/10356/100276 http://hdl.handle.net/10220/25679 |
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