Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias
The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (Vth) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The Vth exhibited a significant negative shift after UV exposure. The Vth instability caused b...
| 主要な著者: | , , , , , , |
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| その他の著者: | |
| フォーマット: | Journal Article |
| 言語: | English |
| 出版事項: |
2014
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| 主題: | |
| オンライン･アクセス: | https://hdl.handle.net/10356/100500 http://hdl.handle.net/10220/18610 |