Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models

We have investigated the electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy /GaAs quantum well (QW) using 10-band, 8-band and 6-band k·p models. The transition energy calculated by the 8-band model agrees very well with the values calculated by the 10-band model, especi...

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Bibliographic Details
Main Authors: Ng, S., Dang, Y., Yoon, S., Fan, Weijun
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100595
http://hdl.handle.net/10220/18006