Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombina...

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Detalhes bibliográficos
Principais autores: Yang, H. Y., Han, Z. J., Ostrikov, K., Goh, Eunice S. M., Chen, Tupei
Outros Autores: School of Electrical and Electronic Engineering
Formato: Journal Article
Idioma:English
Publicado em: 2014
Assuntos:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Acesso em linha:https://hdl.handle.net/10356/100679
http://hdl.handle.net/10220/18580

Internet

https://hdl.handle.net/10356/100679
http://hdl.handle.net/10220/18580

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