Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombina...
Main Authors: | , , , , |
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Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2014
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100679 http://hdl.handle.net/10220/18580 |