Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes
Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes(LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombina...
Principais autores: | , , , , |
---|---|
Outros Autores: | |
Formato: | Journal Article |
Idioma: | English |
Publicado em: |
2014
|
Assuntos: | |
Acesso em linha: | https://hdl.handle.net/10356/100679 http://hdl.handle.net/10220/18580 |