Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy
A p-type GaAs/AlGaAs multi-quantum-well infrared photodetector(QWIP) was fabricated on a GaAs (111)A substrate by molecular-beam epitaxy using silicon as dopant. The same structure was also grown on a GaAs (100) wafer simultaneously to compare the material and structural properties. It was found tha...
| Главные авторы: | , , , , , , |
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| Другие авторы: | |
| Формат: | Journal Article |
| Язык: | English |
| Опубликовано: |
2013
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| Предметы: | |
| Online-ссылка: | https://hdl.handle.net/10356/100687 http://hdl.handle.net/10220/18030 |