Effect of linewidth scaling on hydrostatic stress in passivated interconnects
In this study, numerical work using ANSYS and analytical work based on Eshelby models are performed to examine the effect of linewidth scaling on the hydrostatic stress in passivated metal interconnects. Aluminium and copper interconnects of thickness 1 micron and linewidth ranging from 10 nanomete...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2011
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| Online Access: | https://hdl.handle.net/10356/100760 http://hdl.handle.net/10220/7303 |
| _version_ | 1811685805711687680 |
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| author | Ang, Derrick Ramanujan, Raju V. |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Ang, Derrick Ramanujan, Raju V. |
| author_sort | Ang, Derrick |
| collection | NTU |
| description | In this study, numerical work using ANSYS and analytical work based on Eshelby models are performed to examine the effect of linewidth scaling on the hydrostatic stress in passivated metal interconnects. Aluminium and copper interconnects of thickness 1 micron and linewidth ranging from 10 nanometers to 10,000 microns, passivated with phosphosilicate glass (PSG) are studied. Results from analytical models agree well with numerical results and relevant experimental results. Results show an increasing trend of hydrostatic stress with linewidth for narrow interconnects, and decreasing trend of hydrostatic stress with linewidth for wide interconnects, with a maximum hydrostatic stress at 1 micron linewidth. The calculated maximum hydrostatic stresses are 463 MPa and 534 MPa for aluminium and copper interconnects, respectively. The hydrostatic stress in copper interconnects for all linewidths is larger than that in aluminium interconnects due to copper being a stiffer material than aluminium. It is also observed that there is a large scaling effect. For example in the case of aluminium interconnect, stress values vary between 50 MPa and 463 MPa. |
| first_indexed | 2024-10-01T04:50:22Z |
| format | Conference Paper |
| id | ntu-10356/100760 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:50:22Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/1007602020-06-01T10:01:53Z Effect of linewidth scaling on hydrostatic stress in passivated interconnects Ang, Derrick Ramanujan, Raju V. School of Materials Science & Engineering International Conference on Materials Processing for Properties and Performance (3rd : 2004 : Singapore) DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects DRNTU::Engineering::Materials::Material testing and characterization In this study, numerical work using ANSYS and analytical work based on Eshelby models are performed to examine the effect of linewidth scaling on the hydrostatic stress in passivated metal interconnects. Aluminium and copper interconnects of thickness 1 micron and linewidth ranging from 10 nanometers to 10,000 microns, passivated with phosphosilicate glass (PSG) are studied. Results from analytical models agree well with numerical results and relevant experimental results. Results show an increasing trend of hydrostatic stress with linewidth for narrow interconnects, and decreasing trend of hydrostatic stress with linewidth for wide interconnects, with a maximum hydrostatic stress at 1 micron linewidth. The calculated maximum hydrostatic stresses are 463 MPa and 534 MPa for aluminium and copper interconnects, respectively. The hydrostatic stress in copper interconnects for all linewidths is larger than that in aluminium interconnects due to copper being a stiffer material than aluminium. It is also observed that there is a large scaling effect. For example in the case of aluminium interconnect, stress values vary between 50 MPa and 463 MPa. Accepted version 2011-10-18T04:12:45Z 2019-12-06T20:27:45Z 2011-10-18T04:12:45Z 2019-12-06T20:27:45Z 2004 2004 Conference Paper Ang, D., & Ramanujan, R. V. (2004). Effect of linewidth scaling on hydrostatic stress in passivated interconnects. Paper presented at the International Conference on Materials Processing for Properties and Performance. https://hdl.handle.net/10356/100760 http://hdl.handle.net/10220/7303 143648 en © 2004 International Conference on Materials Processing for Properties and Performance. 10 p. |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects DRNTU::Engineering::Materials::Material testing and characterization Ang, Derrick Ramanujan, Raju V. Effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| title | Effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| title_full | Effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| title_fullStr | Effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| title_full_unstemmed | Effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| title_short | Effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| title_sort | effect of linewidth scaling on hydrostatic stress in passivated interconnects |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects DRNTU::Engineering::Materials::Material testing and characterization |
| url | https://hdl.handle.net/10356/100760 http://hdl.handle.net/10220/7303 |
| work_keys_str_mv | AT angderrick effectoflinewidthscalingonhydrostaticstressinpassivatedinterconnects AT ramanujanrajuv effectoflinewidthscalingonhydrostaticstressinpassivatedinterconnects |