Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers

The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa12xN/GaN quantum wells (QWs) are studied using a numerical approach. We used the effective-mass parameters of GaN and InN derived using the empirical pseudopotential method. By varying the well width and mole...

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Bibliographic Details
Main Authors: Teo, Y. C., Chong, T. C., Li, M. F., Fan, Weijun
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Science::Physics::Atomic physics::Quantum theory
Online Access:https://hdl.handle.net/10356/100792
http://hdl.handle.net/10220/17978

Internet

https://hdl.handle.net/10356/100792
http://hdl.handle.net/10220/17978

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