Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise QD emission...

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Bibliographic Details
Main Authors: Ding, Y., Ma, B. S., Xu, D. W., Liang, S., Zhao, L. J., Wasiak, M., Czyszanowski, T., Nakwaski, W., Fan, Weijun, Yoon, Soon Fatt
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100797
http://hdl.handle.net/10220/18171

Internet

https://hdl.handle.net/10356/100797
http://hdl.handle.net/10220/18171

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