Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure
Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise QD emission...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100797 http://hdl.handle.net/10220/18171 |
| _version_ | 1811681983742345216 |
|---|---|
| author | Ding, Y. Ma, B. S. Xu, D. W. Liang, S. Zhao, L. J. Wasiak, M. Czyszanowski, T. Nakwaski, W. Fan, Weijun Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ding, Y. Ma, B. S. Xu, D. W. Liang, S. Zhao, L. J. Wasiak, M. Czyszanowski, T. Nakwaski, W. Fan, Weijun Yoon, Soon Fatt |
| author_sort | Ding, Y. |
| collection | NTU |
| description | Microphotoluminescence -PL investigation has been performed at room temperature on InAs
quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize
the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise
QD emission spectra including distinct ground state GS and excited state ES transition peaks are
obtained by an edge-excitation and edge-emission EEEE -PL configuration. Conventional
photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which
indicate the EEEE -PL is a useful tool to determine the optical features of the QD active region
in an as-grown VCSEL structure. Some experimental results have been compared with simulation
results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial
growth according to EEEE -PL measurement results, QD-VCSEL structure wafer with QD GS
transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained. |
| first_indexed | 2024-10-01T03:49:37Z |
| format | Journal Article |
| id | ntu-10356/100797 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:49:37Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1007972020-03-07T14:00:32Z Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure Ding, Y. Ma, B. S. Xu, D. W. Liang, S. Zhao, L. J. Wasiak, M. Czyszanowski, T. Nakwaski, W. Fan, Weijun Yoon, Soon Fatt School of Electrical and Electronic Engineering Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy 3Institute of Physics, Technical University of Lodz, ul. Wolczanska DRNTU::Engineering::Electrical and electronic engineering Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise QD emission spectra including distinct ground state GS and excited state ES transition peaks are obtained by an edge-excitation and edge-emission EEEE -PL configuration. Conventional photoluminescence methods for QD-VCSELs structure analysis are compared and discussed, which indicate the EEEE -PL is a useful tool to determine the optical features of the QD active region in an as-grown VCSEL structure. Some experimental results have been compared with simulation results obtained with the aid of the plane-wave admittance method. After adjustment of epitaxial growth according to EEEE -PL measurement results, QD-VCSEL structure wafer with QD GS transition wavelength of 1300 nm and lasing wavelength of 1301 nm was obtained. Published version 2013-12-09T01:39:03Z 2019-12-06T20:28:27Z 2013-12-09T01:39:03Z 2019-12-06T20:28:27Z 2010 2010 Journal Article Ding, Y., Fan, W., Ma, B. S., Xu, D. W., Yoon, S. F., Liang, S., Zhao, L. J., Wasiak, M., Czyszanowski, T.,& Nakwaski, W. (2010). Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure. Journal of applied physics, 108, 073111. 0021-8979 https://hdl.handle.net/10356/100797 http://hdl.handle.net/10220/18171 10.1063/1.3490236 en Journal of applied physics © 2010 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.3490236. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ding, Y. Ma, B. S. Xu, D. W. Liang, S. Zhao, L. J. Wasiak, M. Czyszanowski, T. Nakwaski, W. Fan, Weijun Yoon, Soon Fatt Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| title | Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| title_full | Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| title_fullStr | Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| title_full_unstemmed | Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| title_short | Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure |
| title_sort | microphotoluminescence investigation of inas quantum dot active region in 1 3 μm vertical cavity surface emitting laser structure |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100797 http://hdl.handle.net/10220/18171 |
| work_keys_str_mv | AT dingy microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT mabs microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT xudw microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT liangs microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT zhaolj microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT wasiakm microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT czyszanowskit microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT nakwaskiw microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT fanweijun microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure AT yoonsoonfatt microphotoluminescenceinvestigationofinasquantumdotactiveregionin13mmverticalcavitysurfaceemittinglaserstructure |