Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in n...
| Автори: | , , , , , , |
|---|---|
| Інші автори: | |
| Формат: | Journal Article |
| Мова: | English |
| Опубліковано: |
2013
|
| Предмети: | |
| Онлайн доступ: | https://hdl.handle.net/10356/100805 http://hdl.handle.net/10220/18187 |