Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells

We report observation of transverse electric TE dominant intersubband absorption in Si-doped GaInAsN/GaAs multiple-quantum-well structures. The TE dominant absorption is believed to be caused by the incorporation of nitrogen and the associated nitrogen state. When the confinement is strong in n...

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Bibliographic Details
Main Authors: Fan, Weijun, Yoon, Soon Fatt, Wang, S. Z., Liu, H. C., Zhang, Dao Hua, Liu, W., Sun, L.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100805
http://hdl.handle.net/10220/18187

Internet

https://hdl.handle.net/10356/100805
http://hdl.handle.net/10220/18187

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