Intersubband transitions in InGaAsN/GaAs quantum wells
The dependences of intersubband transitions on well width and nitrogen N content in n-type In0.23Ga0.77As1−xNx /GaAs quantum wells QWs are investigated using a ten-band k·p model. The absorption peak energy is found to increase first with the well width starting from 2 nm. It becomes insensit...
| Auteurs principaux: | , , , , |
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| Autres auteurs: | |
| Format: | Journal Article |
| Langue: | English |
| Publié: |
2013
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| Sujets: | |
| Accès en ligne: | https://hdl.handle.net/10356/100808 http://hdl.handle.net/10220/18167 |