Interdiffusion in narrow InGaAsN∕GaAs quantum wells

Interdiffusion in narrow InGaAsN∕GaAs quantum wells

Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry show...

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Bibliographic Details
Main Authors: Liu, W., Zhang, Dao Hua, Huang, Z. M., Wang, S. Z., Yoon, Soon Fatt, Fan, Weijun, Liu, C. J., Wee, A. T. S.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100809
http://hdl.handle.net/10220/18165

Internet

https://hdl.handle.net/10356/100809
http://hdl.handle.net/10220/18165

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