Interdiffusion in narrow InGaAsN∕GaAs quantum wells
Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry show...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/100809 http://hdl.handle.net/10220/18165 |
| _version_ | 1811696375035854848 |
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| author | Liu, W. Zhang, Dao Hua Huang, Z. M. Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Liu, C. J. Wee, A. T. S. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liu, W. Zhang, Dao Hua Huang, Z. M. Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Liu, C. J. Wee, A. T. S. |
| author_sort | Liu, W. |
| collection | NTU |
| description | Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and
4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of
206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass
spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large
blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred
at a temperature above 700 °C. The theoretical results are in good agreement with the experimental
observations. |
| first_indexed | 2024-10-01T07:38:21Z |
| format | Journal Article |
| id | ntu-10356/100809 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:38:21Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1008092020-03-07T14:00:32Z Interdiffusion in narrow InGaAsN∕GaAs quantum wells Liu, W. Zhang, Dao Hua Huang, Z. M. Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Liu, C. J. Wee, A. T. S. School of Electrical and Electronic Engineering Department of Physics, National University of Singapore DRNTU::Engineering::Electrical and electronic engineering Interdiffusion in In0.32Ga0.68As0.984N0.016 /GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In–Ga and N–As interdiffusions played key roles for the large blueshifts. The significant In–Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations. Published version 2013-12-09T01:22:34Z 2019-12-06T20:28:42Z 2013-12-09T01:22:34Z 2019-12-06T20:28:42Z 2007 2007 Journal Article Liu, W., Zhang, D. H., Huang, Z. M., Wang, S. Z., Yoon, S. F., Fan, W., Liu, C. J., & Wee, A. T. S. (2007). Interdiffusion in narrow InGaAsN∕GaAs quantum wells. Journal of applied physics, 101, 103111. 0021-8979 https://hdl.handle.net/10356/100809 http://hdl.handle.net/10220/18165 10.1063/1.2736943 en Journal of applied physics © 2007 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2736943. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Liu, W. Zhang, Dao Hua Huang, Z. M. Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Liu, C. J. Wee, A. T. S. Interdiffusion in narrow InGaAsN∕GaAs quantum wells |
| title | Interdiffusion in narrow InGaAsN∕GaAs quantum wells |
| title_full | Interdiffusion in narrow InGaAsN∕GaAs quantum wells |
| title_fullStr | Interdiffusion in narrow InGaAsN∕GaAs quantum wells |
| title_full_unstemmed | Interdiffusion in narrow InGaAsN∕GaAs quantum wells |
| title_short | Interdiffusion in narrow InGaAsN∕GaAs quantum wells |
| title_sort | interdiffusion in narrow ingaasn gaas quantum wells |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100809 http://hdl.handle.net/10220/18165 |
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