Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

The photoluminescence (PL) quenching characteristics of a thermal-annealed ~7 nm GaInNAs/ GaAs quantum well (QW) with In=30% and N=1.5% were studied from 4 to 150 K. It is found that the integrated PL intensity versus temperature characteristic can be well fitted by a double activation energy model....

Full description

Bibliographic Details
Main Authors: Ng, T. K., Yoon, Soon Fatt, Fan, Weijun, Loke, Wan Khai, Wang, S. Z., Ng, S. T.
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:https://hdl.handle.net/10356/100830
http://hdl.handle.net/10220/17959

Internet

https://hdl.handle.net/10356/100830
http://hdl.handle.net/10220/17959

Similar Items