InGaN/GaN light-emitting diode with a polarization tunnel junction

InGaN/GaN light-emitting diode with a polarization tunnel junction

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external q...

Full description

Bibliographic Details
Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Kyaw, Zabu, Ji, Yun, Liu, Wei, Ju, Zhengang, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/101048
http://hdl.handle.net/10220/10987

Internet

https://hdl.handle.net/10356/101048
http://hdl.handle.net/10220/10987

Similar Items