InGaN/GaN light-emitting diode with a polarization tunnel junction
We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external q...
| Main Authors: | , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://hdl.handle.net/10356/101048 http://hdl.handle.net/10220/10987 |
| _version_ | 1811688445296246784 |
|---|---|
| author | Zhang, Zi-Hui Tan, Swee Tiam Kyaw, Zabu Ji, Yun Liu, Wei Ju, Zhengang Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Zi-Hui Tan, Swee Tiam Kyaw, Zabu Ji, Yun Liu, Wei Ju, Zhengang Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan |
| author_sort | Zhang, Zi-Hui |
| collection | NTU |
| description | We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p+/n+ tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p+-GaN and n+-GaN layers. |
| first_indexed | 2024-10-01T05:32:19Z |
| format | Journal Article |
| id | ntu-10356/101048 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:32:19Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1010482023-02-28T19:23:11Z InGaN/GaN light-emitting diode with a polarization tunnel junction Zhang, Zi-Hui Tan, Swee Tiam Kyaw, Zabu Ji, Yun Liu, Wei Ju, Zhengang Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p+/n+ tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p+-GaN and n+-GaN layers. Published version 2013-07-05T03:47:35Z 2019-12-06T20:32:39Z 2013-07-05T03:47:35Z 2019-12-06T20:32:39Z 2013 2013 Journal Article Zhang, Z.-H., Tan, S. T., Kyaw, Z., Ji, Y., Liu, W., Ju, Z., et al. (2013). InGaN/GaN light-emitting diode with a polarization tunnel junction. Applied physics letters, 102(19). 0003-6951 https://hdl.handle.net/10356/101048 http://hdl.handle.net/10220/10987 10.1063/1.4806978 en Applied physics letters © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4806978]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | Zhang, Zi-Hui Tan, Swee Tiam Kyaw, Zabu Ji, Yun Liu, Wei Ju, Zhengang Hasanov, Namig Sun, Xiaowei Demir, Hilmi Volkan InGaN/GaN light-emitting diode with a polarization tunnel junction |
| title | InGaN/GaN light-emitting diode with a polarization tunnel junction |
| title_full | InGaN/GaN light-emitting diode with a polarization tunnel junction |
| title_fullStr | InGaN/GaN light-emitting diode with a polarization tunnel junction |
| title_full_unstemmed | InGaN/GaN light-emitting diode with a polarization tunnel junction |
| title_short | InGaN/GaN light-emitting diode with a polarization tunnel junction |
| title_sort | ingan gan light emitting diode with a polarization tunnel junction |
| url | https://hdl.handle.net/10356/101048 http://hdl.handle.net/10220/10987 |
| work_keys_str_mv | AT zhangzihui inganganlightemittingdiodewithapolarizationtunneljunction AT tansweetiam inganganlightemittingdiodewithapolarizationtunneljunction AT kyawzabu inganganlightemittingdiodewithapolarizationtunneljunction AT jiyun inganganlightemittingdiodewithapolarizationtunneljunction AT liuwei inganganlightemittingdiodewithapolarizationtunneljunction AT juzhengang inganganlightemittingdiodewithapolarizationtunneljunction AT hasanovnamig inganganlightemittingdiodewithapolarizationtunneljunction AT sunxiaowei inganganlightemittingdiodewithapolarizationtunneljunction AT demirhilmivolkan inganganlightemittingdiodewithapolarizationtunneljunction |