Flexible nanoscale memory device based on resistive switching in nickel oxide thin film
In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101075 http://hdl.handle.net/10220/13694 |