Flexible nanoscale memory device based on resistive switching in nickel oxide thin film
In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101075 http://hdl.handle.net/10220/13694 |
| _version_ | 1826121894630260736 |
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| author | Yu, Q. Hu, S. G. Deng, L. J. Liu, Y. Lim, Wei Meng Chen, Tupei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yu, Q. Hu, S. G. Deng, L. J. Liu, Y. Lim, Wei Meng Chen, Tupei |
| author_sort | Yu, Q. |
| collection | NTU |
| description | In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability. |
| first_indexed | 2024-10-01T05:39:57Z |
| format | Journal Article |
| id | ntu-10356/101075 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:39:57Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1010752020-03-07T14:00:34Z Flexible nanoscale memory device based on resistive switching in nickel oxide thin film Yu, Q. Hu, S. G. Deng, L. J. Liu, Y. Lim, Wei Meng Chen, Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability. 2013-09-25T07:26:35Z 2019-12-06T20:33:06Z 2013-09-25T07:26:35Z 2019-12-06T20:33:06Z 2012 2012 Journal Article Yu, Q., Lim, W. M., Hu, S. G., Chen, T., Deng, L. J., & Liu, Y. (2012). Flexible nanoscale memory device based on resistive switching in nickel oxide thin film. Nanoscience and nanotechnology letters, 4(9), 940-943(4). https://hdl.handle.net/10356/101075 http://hdl.handle.net/10220/13694 10.1166/nnl.2012.1398 en Nanoscience and nanotechnology letters |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Yu, Q. Hu, S. G. Deng, L. J. Liu, Y. Lim, Wei Meng Chen, Tupei Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| title | Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| title_full | Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| title_fullStr | Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| title_full_unstemmed | Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| title_short | Flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| title_sort | flexible nanoscale memory device based on resistive switching in nickel oxide thin film |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/101075 http://hdl.handle.net/10220/13694 |
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