Vapor–liquid–solid growth of endotaxial semiconductor nanowires
Free-standing and in-plane lateral nanowires (NWs) grown by the vapor–liquid–solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | https://hdl.handle.net/10356/101089 http://hdl.handle.net/10220/11095 |